NST3906DP6T5G

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NST3906DP6T5G - Onsemi
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Краткое описание: Dual PNP BJT, 40V, 200mA, 250MHz, SOT-963
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual PNP bipolar junction transistor in a SOT-963-6 package, featuring a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. This device offers a 250MHz transition frequency and a minimum hFE of 60. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 280mW. The component is RoHS compliant and supplied on an 8000-piece tape and reel.
RoHS Compliant
Width 0.85mm
Height 0.4mm
Length 1.05mm
hFE Min 60
Polarity PNP
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-963-6
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 8000
Power Dissipation 280mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 280mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 400mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -400mV