NSVBC817-16LT1G

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NSVBC817-16LT1G - Onsemi
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Краткое описание: NPN BJT, 50V VCBO, 45V VCEO, 500mA IC, 100MHz fT, SOT-23-3
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in SOT-23-3 surface mount package. Features include a 45V collector-emitter breakdown voltage, 500mA maximum collector current, and 100 minimum hFE. Operates with a 100MHz transition frequency and a maximum power dissipation of 300mW. This lead-free, RoHS compliant component is supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Height 1.11mm
Weight 0.050717oz
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 225mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV

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