NTB45N06LT4G
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Краткое описание:
N-Ch MOSFET, 60V, 45A, 28mR RdsOn, D2PAK
Дополнительная информация
Single N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 45A continuous drain current. Offers low 28mΩ drain-source on-resistance at Vgs=10V, 10A. Housed in a D2PAK package, this component supports a maximum power dissipation of 125W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 158ns.
| RoHS | Compliant |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.29mm |
| Polarity | N-CHANNEL |
| Fall Time | 158ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | D2PAK |
| Current Rating | 45A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Element Configuration | Single |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 26MR |
| Drain to Source Breakdown Voltage | 60V |
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