NTB5605PT4G
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P-Channel MOSFET -60V, 18.5A, 140mΩ, D2PAK
Дополнительная информация
Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and 18.5A continuous drain current. This component offers a low drain-to-source resistance of 120mΩ (max) at a 10V gate-source voltage. Designed for high-power applications, it boasts a maximum power dissipation of 88W and operates across a wide temperature range of -55°C to 175°C. The MOSFET is housed in a D2PAK package, facilitating efficient thermal management.
| RoHS | Compliant |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.29mm |
| Polarity | P-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 140mR |
| Package/Case | D2PAK |
| Current Rating | -18.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 1.19nF |
| Power Dissipation | 88W |
| Threshold Voltage | -1.5V |
| Turn-On Delay Time | 12.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 88W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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