NTB60N06T4G
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Краткое описание:
N-Channel MOSFET, 60V, 60A, 14mR Rds(on), D2PAK
Дополнительная информация
Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 60A continuous drain current. This MOSFET offers a low 14mΩ drain-source on-resistance and a maximum power dissipation of 150W. Packaged in a D2PAK with 2 leads, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 25.5ns turn-on delay and 94.5ns turn-off delay. This RoHS compliant component is supplied on an 800-piece tape and reel.
| RoHS | Compliant |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.29mm |
| Polarity | N-CHANNEL |
| Fall Time | 142.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | D2PAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 800 |
| Input Capacitance | 3.22nF |
| Power Dissipation | 150W |
| Threshold Voltage | 2.85V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 94.5ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16MR |
| Drain to Source Breakdown Voltage | 60V |
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