NTD14N03RT4G
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Краткое описание:
N-Ch MOSFET, 25V, 14A, 95mΩ, DPAK
Дополнительная информация
N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 14A continuous drain current. Offers a maximum drain-source on-resistance of 95mΩ at a 10V gate-source voltage. This single MOSFET is housed in a DPAK package, suitable for surface-mount applications. Key switching characteristics include a typical turn-on delay of 3.8ns and a fall time of 27ns. Operating temperature range spans from -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 95mR |
| Package/Case | DPAK |
| Current Rating | 14A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 1 |
| Input Capacitance | 115pF |
| Power Dissipation | 1.56W |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.6ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.04W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 130MR |
| Drain to Source Breakdown Voltage | 25V |
