NTD24N06LT4G
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Краткое описание:
N-Ch MOSFET, 60V, 24A, 36mΩ, DPAK
Дополнительная информация
Single N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 24A continuous drain current. Offers low 36mΩ drain-source on-resistance at a nominal Vgs of 1.7V. Packaged in a DPAK (TO-252) surface-mount case, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 62.5W. Ideal for power switching applications requiring efficient performance.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 52ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | 1.7V |
| Package/Case | DPAK |
| Current Rating | 24A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.14nF |
| Power Dissipation | 62.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.36W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 36mR |
| Drain to Source Breakdown Voltage | 60V |
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