NTD24N06T4G
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Краткое описание:
N-Ch MOSFET, 60V, 24A, 42mΩ, DPAK
Дополнительная информация
Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 24A. Offers low on-resistance with a maximum of 42mΩ at a 10V gate-source voltage. Designed for efficient switching with turn-on delay time of 10ns and fall time of 27ns. Housed in a DPAK package, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 62.5W.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Package/Case | DPAK |
| Current Rating | 24A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 62.5W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.36W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain-source On Resistance-Max | 36mR |
| Drain to Source Breakdown Voltage | 60V |
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