NTD2955-1G
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P-Channel MOSFET -60V, -12A, 155mR, TO-251
Дополнительная информация
Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 12A. This component offers a low drain-source on-resistance of 155mΩ at a nominal Vgs of -2.8V. Designed for insertion mounting, it is housed in a TO-251-3 (DPAK) package with dimensions of 6.73mm length, 6.35mm height, and 2.38mm width. Maximum power dissipation is rated at 55W, with operating temperatures ranging from -55°C to 175°C. This RoHS compliant device is supplied in a 75-piece rail/tube.
| RoHS | Compliant |
| Width | 2.38mm |
| Height | 6.35mm |
| Length | 6.73mm |
| Polarity | P-CHANNEL |
| Fall Time | 48ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Nominal Vgs | -2.8V |
| Package/Case | TO-251-3 |
| Current Rating | -12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 75 |
| Input Capacitance | 750pF |
| Power Dissipation | 55W |
| Threshold Voltage | -2.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 55W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain-source On Resistance-Max | 155MR |
| Drain to Source Breakdown Voltage | -60V |
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