NTD3055L104-1G
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N-Channel MOSFET, 60V, 12A, 104mR, DPAK, Logic Level
Дополнительная информация
Single N-Channel Logic Level Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 12A Continuous Drain Current. This component offers a low 104mΩ Drain to Source Resistance, ideal for power switching applications. Packaged in a TO-251-3 (DPAK INSERTION MOUNT) with a maximum power dissipation of 48W, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 40.5ns fall time, with a nominal Vgs of 2V.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 40.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 104mR |
| Nominal Vgs | 2V |
| Package/Case | TO-251-3 |
| Current Rating | 25A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 75 |
| Input Capacitance | 440pF |
| Power Dissipation | 48W |
| Threshold Voltage | 1.6V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 104mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 60V |
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