NTD3055L170T4G
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Краткое описание:
N-Ch MOSFET, 60V, 9A, 170mR, Logic Level, DPAK
Дополнительная информация
Single N-Channel Logic Level Power MOSFET, DPAK package. Features 60V drain-source breakdown voltage, 9A continuous drain current, and 170mΩ maximum drain-source on-resistance. Operates with a 1.7V threshold voltage and a 15V gate-source voltage. Offers fast switching with turn-on delay of 9.7ns and fall time of 38ns. Maximum power dissipation is 28.5W, with a maximum operating temperature of 175°C. RoHS compliant.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Package/Case | DPAK |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 275pF |
| Power Dissipation | 28.5W |
| Threshold Voltage | 1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 170MR |
| Drain to Source Breakdown Voltage | 60V |
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