NTD5865NLT4G
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Краткое описание:
N-Channel MOSFET, 60V, 46A, 16mΩ, DPAK, Logic Level
Дополнительная информация
Single N-Channel Logic Level Power MOSFET, DPAK surface mount package. Features 60V drain-source breakdown voltage and 46A continuous drain current. Offers a maximum drain-source on-resistance of 16mΩ at 10Vgs. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 52W. Includes fast switching characteristics with turn-on delay time of 8.4ns and fall time of 4.4ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 4.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Input Capacitance | 1.4nF |
| Power Dissipation | 52W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16MR |
| Drain to Source Breakdown Voltage | 60V |
