NTD5867NLT4G
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N-Ch Power MOSFET, 60V, 20A, 39mΩ, DPAK, Logic Level
Дополнительная информация
Single N-Channel Logic Level Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 39mΩ Drain to Source On Resistance. This surface mount component offers a continuous drain current of 20A and a maximum power dissipation of 36W. Designed for logic-level gate drive with a nominal Vgs of 1.8V, it operates across a temperature range of -55°C to 150°C. The MOSFET is housed in a DPAK package, facilitating efficient heat dissipation and integration into compact designs.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 2.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Nominal Vgs | 1.8V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 675pF |
| Power Dissipation | 36W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18.2ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 36W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 39mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 39MR |
| Drain to Source Breakdown Voltage | 60V |
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