NTE123A
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Краткое описание:
NPN RF Transistor TO-18 75V 40V 10nA 800mW Through Hole
Дополнительная информация
The NTE123A is a TO-18 packaged NPN RF transistor with a collector base voltage of 75V and a collector emitter breakdown voltage of 40V. It has a maximum collector current of 10nA and a maximum power dissipation of 800mW. The transistor is RoHS compliant and has a transition frequency of 300MHz. It is suitable for use in high-frequency applications and can operate over a temperature range of -65°C to 200°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.21inch |
| Diameter | 5.84mm |
| Polarity | NPN |
| Package/Case | TO-18 |
| RoHS Compliant | Yes |
| Power Dissipation | 400mW |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 300MHz |
| Max Collector Current | 10nA |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
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