NTE128
Производится
Увеличить
Краткое описание:
NPN Transistor TO-39 140V 80V 10nA 800mW Through Hole
Дополнительная информация
The NTE128 is a TO-39 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a collector-emitter saturation voltage of 500mV. It can handle a maximum collector current of 10nA and a maximum power dissipation of 800mW. The transistor has a transition frequency of 400MHz and a maximum operating temperature of 200°C. It is RoHS compliant and suitable for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.26inch |
| Diameter | 9.39mm |
| Polarity | NPN |
| Package/Case | TO-39 |
| Max Frequency | 400MHz |
| RoHS Compliant | Yes |
| Power Dissipation | 800mW |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 400MHz |
| Max Collector Current | 10nA |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
