NTE159M
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Краткое описание:
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN
Дополнительная информация
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.21inch |
| Diameter | 5.84mm |
| Polarity | PNP |
| Package/Case | TO-18 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Power Dissipation | 400mW |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Collector Current | 50nA |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Voltage (VCEO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.6V |
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