NTE175

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NTE175 - NTE Electronics
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Краткое описание: NPN Transistor TO-66 300V 2A 35W Through Hole
Производитель NTE Electronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTE175 is a NPN transistor with a collector base voltage of 500V and collector emitter breakdown voltage of 300V. It has a collector emitter saturation voltage of 750mV and a current rating of 2A. The transistor is packaged in a TO-66 flange mount package and is suitable for operation at temperatures between -65°C and 200°C. The NTE175 is RoHS compliant and has a power dissipation of 35W.
RoHS Compliant
Mount Through Hole
Height 0.295inch
Diameter 12.3mm
Polarity NPN
Package/Case TO-66
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 300V
Power Dissipation 35W
Reach SVHC Compliant Unknown
Transition Frequency 15MHz
Max Collector Current 5mA
Max Power Dissipation 35W
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 500V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 750mV

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