NTE2322
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Краткое описание:
Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 14 Pin
Дополнительная информация
Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 14 Pin
| RoHS | Not Compliant |
| Mount | Through Hole |
| Width | 0.3inch |
| Height | 0.2inch |
| Length | 0.785inch |
| Polarity | PNP |
| Package/Case | DIP |
| Max Frequency | 200MHz |
| Current Rating | 600mA |
| RoHS Compliant | No |
| DC Rated Voltage | 40V |
| Power Dissipation | 1.9W |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Collector Current | 50nA |
| Max Power Dissipation | 650mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.6V |
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