NTE2348

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NTE2348 - NTE Electronics
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Краткое описание: NPN Bipolar Junction Transistor 800V 12A 150W Through Hole
Производитель NTE Electronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTE2348 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 800V and a current rating of 12A. It has a maximum power dissipation of 150W and can operate within a temperature range of -55°C to 150°C. The transistor is mounted through a hole and has a flange mount package type. It is compliant with RoHS regulations.
RoHS Compliant
Mount Through Hole
Polarity NPN
Current Rating 12A
RoHS Compliant Yes
DC Rated Voltage 800V
Reach SVHC Compliant Unknown
Transition Frequency 15MHz
Max Collector Current 10uA
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 1.1kV
Collector-emitter Voltage-Max 2V
Collector Emitter Voltage (VCEO) 800V
Collector Emitter Breakdown Voltage 800V

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