NTE2393
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Краткое описание:
500V 9A N-Ch MOSFET, 0.7 Ohm Rds(on), Through Hole
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET designed for power applications. Features a 500V drain-to-source breakdown voltage and a continuous drain current rating of 9A. Offers a low on-resistance of 0.7 ohms (700mR) at a nominal gate-to-source voltage of 4V. Maximum power dissipation is 150W, with a maximum operating temperature of 150°C. Through-hole mounting package with fast switching characteristics, including turn-on delay time of 30ns and fall time of 30ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.19inch |
| Height | 0.787inch |
| Length | 0.614inch |
| Fall Time | 30ns |
| Rds On Max | 670mR |
| Resistance | 0.7R |
| Nominal Vgs | 4V |
| Polarization | N |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 130ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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