NTE2396
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Краткое описание:
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.61inch |
| Length | 0.42inch |
| Fall Time | 48ns |
| Rds On Max | 77mR |
| Nominal Vgs | 2V |
| Package/Case | TO-220 |
| Polarization | N |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Input Capacitance | 1.3nF |
| Power Dissipation | 150W |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 77mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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