NTE2397
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Краткое описание:
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.61inch |
| Length | 0.42inch |
| Rds On Max | 550mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Power Dissipation | 125W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 400V |
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