NTE271
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Краткое описание:
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Дополнительная информация
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.173inch |
| Height | 0.55inch |
| Length | 0.6inch |
| Polarity | PNP |
| Package/Case | TO-218 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Power Dissipation | 125W |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 2mA |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 3V |
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