NTE324

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NTE324 - NTE Electronics
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Краткое описание: NPN BJT TO-39 120V 1A 10W Through Hole
Производитель NTE Electronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTE324 is a TO-39 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 120V and a collector-emitter saturation voltage of 2V. It can handle a maximum collector current of 10uA and a maximum power dissipation of 10W. The transistor has a transition frequency of 30MHz and is RoHS compliant. It operates over a temperature range of -65°C to 200°C and is suitable for use in a variety of applications.
RoHS Compliant
Mount Through Hole
Height 0.26inch
Diameter 9.39mm
Polarity NPN
Package/Case TO-39
Current Rating 1A
RoHS Compliant Yes
DC Rated Voltage 120V
Power Dissipation 10W
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Collector Current 10uA
Max Power Dissipation 10W
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 2V
Collector Emitter Voltage (VCEO) 4V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 2V

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