NTE386

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NTE386 - NTE Electronics
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Краткое описание: NPN Transistor TO-3 500V 20A 175W Through Hole
Производитель NTE Electronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTE386 is a TO-3 flange mount transistor with a collector-emitter breakdown voltage of 500V and a current rating of 20A. It has a maximum power dissipation of 175W and operates over a temperature range of -65°C to 200°C. The transistor is RoHS compliant and has a maximum collector-emitter saturation voltage of 5V. It is a NPN bipolar junction transistor with a diameter of 22.2mm and a height of 0.35inch.
RoHS Compliant
Mount Through Hole
Height 0.35inch
Diameter 22.2mm
Polarity NPN
Package/Case TO-3
Current Rating 20A
RoHS Compliant Yes
DC Rated Voltage 500V
Power Dissipation 175W
Reach SVHC Compliant No
Max Collector Current 250uA
Max Power Dissipation 175W
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector-emitter Voltage-Max 5V
Collector Emitter Voltage (VCEO) 500V
Collector Emitter Breakdown Voltage 500V
Collector Emitter Saturation Voltage 5V

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