NTE4153NT1G

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NTE4153NT1G - Onsemi
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Краткое описание: Single N-Ch JFET, 20V, 915mA, 230mR, SC-89, Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Single N-Channel JFET, 20V Drain-Source Breakdown Voltage, 915mA Continuous Drain Current, and 230mΩ Drain-Source On-Resistance. Features include a 3.7ns Turn-On Delay Time, 4.4ns Fall Time, and 25ns Turn-Off Delay Time. Operating temperature range from -55°C to 150°C with 300mW Max Power Dissipation. Packaged in an SC-89, 3-lead, tape and reel configuration.
RoHS Compliant
Width 0.037inch
Height 0.031inch
Length 0.066inch
Polarity N-CHANNEL
Fall Time 4.4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 230mR
Nominal Vgs 760mV
Package/Case SC
Polarization N
Current Rating 915mA
RoHS Compliant Yes
DC Rated Voltage 20V
Package Quantity 3000
Input Capacitance 110pF
Power Dissipation 300mW
Threshold Voltage 760mV
Number of Elements 1
Turn-On Delay Time 3.7ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 500mR
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) 915mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 230MR
Drain to Source Breakdown Voltage 20V

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