NTK3134NT1G
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Краткое описание:
N-Channel JFET, 20V, 890mA, 200mR, SOT-723
Дополнительная информация
Single N-Channel Power MOSFET, SOT-723 package, featuring 20V drain-source breakdown voltage and 890mA continuous drain current. Offers a maximum drain-source on-resistance of 200mΩ. Operates within a temperature range of -55°C to 150°C with 310mW power dissipation. Includes ESD protection and is RoHS compliant.
| RoHS | Compliant |
| Width | 0.85mm |
| Height | 0.55mm |
| Length | 1.25mm |
| Polarity | N-CHANNEL |
| Fall Time | 4.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Package/Case | SOT-723-3 |
| RoHS Compliant | Yes |
| Package Quantity | 4000 |
| Input Capacitance | 120pF |
| Power Dissipation | 310mW |
| Threshold Voltage | 1.2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.3ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 310mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 890mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | 20V |
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