NTMD4840NR2G
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Краткое описание:
Dual N-Ch MOSFET 30V 4.5A 28mR SOIC-8
Дополнительная информация
Dual N-Channel Power MOSFET featuring 30V Drain to Source Breakdown Voltage and 7.5A Continuous Drain Current. Offers low 24mΩ Drain to Source Resistance and 1.95W Power Dissipation. SOIC-8 Narrow Body package with 5mm length, 4mm width, and 1.5mm height. Operates from -55°C to 150°C, with 3ns fall time and 7.6ns turn-on delay. Lead Free and RoHS Compliant.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 520pF |
| Power Dissipation | 1.95W |
| Turn-On Delay Time | 7.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Element Configuration | Dual |
| Max Power Dissipation | 680mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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