NTMD6N02R2G
Производится
Увеличить
Краткое описание:
Dual N-Ch MOSFET 20V 6.5A 35mR SOIC-8
Дополнительная информация
Dual N-Channel Enhancement Mode Power MOSFET featuring 20V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 35mΩ drain-source on-resistance and 2W maximum power dissipation. This SOIC-8 narrow body package component operates from -55°C to 150°C and is RoHS compliant. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 80ns.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 80ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | 900mV |
| Package/Case | SOIC |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 2500 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
