NTMD6P02R2G
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Краткое описание:
Dual P-Channel JFET -20V -6A 33mΩ SOIC-8
Дополнительная информация
Dual P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 7.8A. Offers a low drain-source on-resistance of 33mΩ (max) and 27mΩ. This SOIC-8 narrow body package component operates within a temperature range of -55°C to 150°C, with a gate-to-source voltage of 12V and a threshold voltage of -880mV. Includes a 1.7nF input capacitance and is supplied in tape and reel packaging.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Package/Case | SOIC |
| Current Rating | -6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 2500 |
| Input Capacitance | 1.7nF |
| Number of Drivers | 2 |
| Number of Outputs | 1 |
| Power Dissipation | 2W |
| Threshold Voltage | -880mV |
| Max Output Current | 6A |
| Radiation Hardening | No |
| Turn-Off Delay Time | 85ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 33mR |
| Drain to Source Breakdown Voltage | -20V |
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