NTMS4816NR2G
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Краткое описание:
N-Channel Power MOSFET, 30V, 11A, 10mΩ, SOIC-8
Дополнительная информация
Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 11A continuous drain current. Offers low 10mΩ drain-to-source resistance (Rds On Max) and 1.06nF input capacitance. Designed for efficient switching with 8ns turn-on delay and 8ns fall time. Packaged in a narrow SOIC-8 body, this component operates from -55°C to 150°C and supports 2.04W power dissipation.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.06nF |
| Power Dissipation | 2.04W |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21.6ns |
| Element Configuration | Single |
| Max Power Dissipation | 780mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
