NTMS4937NR2G

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NTMS4937NR2G - Onsemi
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Краткое описание: N-Channel JFET, Single, 30V, 8.6A, SOIC-8
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTMS4937NR2G is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 30V and a continuous drain current of 8.6A. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant. The transistor has a maximum power dissipation of 810mW and a maximum drain to source resistance of 5.4mΩ. It is suitable for use in a variety of applications, including those requiring high current and low resistance.
RoHS Compliant
Polarity N-CHANNEL
Fall Time 38.9ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6.5mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 2.563nF
Power Dissipation 1.36W
Turn-On Delay Time 12.3ns
Radiation Hardening No
Turn-Off Delay Time 33.8ns
Element Configuration Single
Max Power Dissipation 810mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.4mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.6A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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