NTMS5835NLR2G
Снят с производства
Увеличить
Краткое описание:
N-Channel MOSFET, 40V, 9.2A, 14mR, SOIC-8, Logic Level
Дополнительная информация
N-Channel Power MOSFET in SOIC-8 narrow body package. Features 40V drain-to-source breakdown voltage and 10mΩ maximum drain-to-source resistance. Supports a continuous drain current of 9.2A and a gate-to-source voltage of 20V. Offers fast switching with a 9ns fall time, 15ns turn-on delay, and 22ns turn-off delay. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Nominal Vgs | 1.85V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Input Capacitance | 2.115nF |
| Power Dissipation | 1.5W |
| Threshold Voltage | 1.85V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Element Configuration | Single |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
