NTP6410ANG

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NTP6410ANG - Onsemi
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Краткое описание: N-CH Power MOSFET 100V 76A TO-220AB
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET designed for through-hole mounting. Features a 100V drain-source voltage, 76A continuous drain current, and low 13mΩ drain-source resistance at 10V. Housed in a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 188W. Operates across a wide temperature range from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 5V1P1
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.66(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.83(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.28(Max)
Package Length (mm) 10.53(Max)
Radiation Hardening No
Seated Plane Height (mm) 19.68(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 188000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 120nC
Typical Gate Charge @ Vgs 120@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 100V
Maximum Drain Source Resistance 13@10VmOhm
Typical Input Capacitance @ Vds 4500@25VpF
Maximum Continuous Drain Current 76A

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