NTR4101PT1G
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Краткое описание:
P-Channel JFET, -20V, 3.2A, 85mΩ, SOT-23
Дополнительная информация
Single P-Channel Trench Power MOSFET featuring a -20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 3.2A. This device offers a low Drain-source On Resistance (Rds On) of 85mΩ at a Gate to Source Voltage (Vgs) of 8V. The SOT-23-3 package houses a single element configuration with a maximum power dissipation of 730mW. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 12.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Nominal Vgs | -720mV |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 675pF |
| Power Dissipation | 730mW |
| Threshold Voltage | -720mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30.2ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 730mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 112mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 70MR |
| Drain to Source Breakdown Voltage | -20V |
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