NTR4503NT1G
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Краткое описание:
N-Channel JFET, 30V, 2.5A, 110mΩ, SOT-23
Дополнительная информация
Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and a continuous drain current of 2.5A. This component offers a maximum drain-source on-resistance of 85mΩ at a nominal gate-source voltage of 1.75V. Designed for small signal applications, it operates within a temperature range of -55°C to 150°C and is packaged in a compact SOT-23-3 (TO-236) surface-mount package. Key switching characteristics include a turn-on delay time of 5.8ns and a fall time of 6.7ns.
| RoHS | Compliant |
| Width | 1.4mm |
| Height | 1.01mm |
| Length | 3.04mm |
| Polarity | N-CHANNEL |
| Fall Time | 6.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 110mR |
| Nominal Vgs | 1.75V |
| Package/Case | SOT-23-3 |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 250pF |
| Power Dissipation | 730mW |
| Threshold Voltage | 1.75V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.6ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 730mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 85MR |
| Drain to Source Breakdown Voltage | 30V |
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