NTUD3169CZT5G
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Краткое описание:
Dual N/P-Ch JFET, 20V, 200mA, 1.5R, SOT-963
Дополнительная информация
Dual N and P-Channel complementary small signal MOSFET in a compact SOT-963 package. Features a 20V drain-to-source breakdown voltage and a 200mA continuous drain current. Offers a low 1.5 Ohm maximum drain-to-source resistance (Rds On) and a 1V threshold voltage. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 200mW. Supplied on an 8000-piece tape and reel.
| RoHS | Compliant |
| Width | 0.85mm |
| Height | 0.4mm |
| Length | 1.05mm |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 145ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | SOT-963 |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 12.5pF |
| Power Dissipation | 200mW |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 26ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 196ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 125mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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