NTZS3151PT1H

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NTZS3151PT1H - Onsemi
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Краткое описание: P-CHANNEL JFET, Single, 8V Vgs, 150mR Rds On, 170mW, SOT-563
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The NTZS3151PT1H is a P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features an input capacitance of 458pF and a drain to source resistance of 150mR. The device is packaged in a SOT-563 package and is available in quantities of 4000 per reel. The NTZS3151PT1H is RoHS compliant and has a maximum power dissipation of 170mW.
RoHS Compliant
Polarity P-CHANNEL
Fall Time 18ns
Packaging Tape and Reel
Rds On Max 150mR
Package/Case SOT-563
RoHS Compliant Yes
Package Quantity 4000
Input Capacitance 458pF
Turn-On Delay Time 5ns
Radiation Hardening No
Turn-Off Delay Time 23.7ns
Element Configuration Single
Max Power Dissipation 170mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 150mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 860mA
Drain to Source Voltage (Vdss) 20V

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