NVF3055L108T1G
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N-Channel MOSFET, 60V, 3A, 120mR, SOT-223
Дополнительная информация
Single N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 3A continuous drain current. Offers a low 120mΩ maximum drain-source on-resistance. Designed for automotive applications, this MOSFET operates within a temperature range of -55°C to 175°C and is housed in a SOT-223-4 package. Key switching parameters include a 27ns fall time, 22ns turn-off delay, and 11ns turn-on delay.
| RoHS | Compliant |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SOT-223-4 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 440pF |
| Power Dissipation | 2.1W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 120mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120MR |
| Drain to Source Breakdown Voltage | 60V |
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