NVJD5121NT1G
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Краткое описание:
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, 3000-REEL
Дополнительная информация
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, 3000-REEL
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6R |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 26pF |
| Power Dissipation | 250mW |
| Number of Channels | 2 |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 34ns |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 295mA |
| Drain to Source Voltage (Vdss) | 60V |
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