NVMFD5877NLT1G
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Краткое описание:
Dual N-Ch MOSFET 60V 17A 39mΩ DFN8 5x6
Дополнительная информация
Dual N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 17A continuous drain current. Offers a low 39mΩ maximum drain-source on-resistance. Packaged in a compact 5x6mm DFN8 footprint with a 1.27P pitch, this component operates from -55°C to 175°C and is RoHS compliant. Includes two N-channel elements with a 3V threshold voltage and 8.1ns turn-on delay.
| RoHS | Compliant |
| Width | 5.1mm |
| Height | 1.05mm |
| Length | 6.1mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Halogen Free | Halogen Free |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Input Capacitance | 540pF |
| Power Dissipation | 23W |
| Threshold Voltage | 3V |
| Number of Elements | 2 |
| Turn-On Delay Time | 8.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14.5ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 39MR |
| Drain to Source Breakdown Voltage | 60V |
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