NVMFS5844NLT1G
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N-Channel Power MOSFET, 60V, 12mR, DFN, 11.2A
Дополнительная информация
N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 12mΩ maximum drain-source on-resistance. This single element MOSFET offers a continuous drain current of 11.2A and a maximum power dissipation of 107W. Designed for logic-level gate drive with a 20V gate-source voltage, it operates across a wide temperature range from -55°C to 175°C. The component is supplied in a DFN 5x6 package, tape and reel packaged, and is RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Halogen Free | Halogen Free |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 650 |
| Input Capacitance | 1.46nF |
| Power Dissipation | 107W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 12mR |
| Drain to Source Breakdown Voltage | 60V |
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