Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. Offers a low 10.5mOhm drain-source resistance at a logic-level gate drive. Designed for high-efficiency switching with fast switching times, including a 12ns turn-on delay and 4ns fall time. Housed in a compact WDFN8 3.3x3.3mm package with a low profile of 0.75mm, suitable for demanding applications. Operates across a wide temperature range from -55°C to 175°C and is RoHS and Halogen Free compliant.
| RoHS |
Compliant |
| Width |
3.15mm |
| Height |
0.75mm |
| Length |
3.15mm |
| Polarity |
N-CHANNEL |
| Fall Time |
4ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
10.5mR |
| Halogen Free |
Halogen Free |
| RoHS Compliant |
Yes |
| Package Quantity |
5000 |
| Input Capacitance |
750pF |
| Power Dissipation |
21W |
| Turn-On Delay Time |
12ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
14ns |
| Element Configuration |
Single |
| Max Power Dissipation |
3.1W |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
10.5mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
30A |
| Drain to Source Voltage (Vdss) |
30V |
| Drain to Source Breakdown Voltage |
30V |