NVTFS5820NLTAG
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Краткое описание:
60V 11.5mR N-Ch Power MOSFET, Logic Level, WDFN8
Дополнительная информация
Single N-Channel Power MOSFET with 60V Drain to Source Breakdown Voltage and 11A Continuous Drain Current. Features 11.5mOhm Rds On Max at 10Vgs, 2.3V Threshold Voltage, and 1.462nF Input Capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.2W. Packaged in a compact WDFN8 3.3x3.3mm surface-mount package, supplied on a 1500-piece tape and reel. This RoHS compliant component offers fast switching characteristics with turn-on delay of 10ns and fall time of 22ns.
| RoHS | Compliant |
| Width | 3.15mm |
| Height | 0.75mm |
| Length | 3.15mm |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11.5mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Input Capacitance | 1.462nF |
| Power Dissipation | 21W |
| Threshold Voltage | 2.3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
