OP505A
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Краткое описание:
NPN Phototransistor, 30V VCEO, 935nm, T Package, Through Hole
Дополнительная информация
NPN phototransistor chip, silicon, 2-pin T-1 package, through-hole mount. Features 30V collector-emitter breakdown voltage, 400mV collector-emitter saturation voltage, and 5.95mA max collector current. Operates from 5V supply, with a 935nm wavelength sensitivity and 25° viewing angle. Encased in a blue lens, this RoHS compliant component offers a 100mW power dissipation and operates between -40°C and 100°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.84mm |
| Length | 4.19mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Blue |
| Wavelength | 935nm |
| Lead Length | 12.7mm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Material | SILICON |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Max Collector Current | 5.95mA |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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