OP505D
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Краткое описание:
NPN Phototransistor, 30V, 930nm, Through Hole
Дополнительная информация
General purpose NPN phototransistor with a 930nm peak sensitivity. Features a 30V collector-emitter breakdown voltage and a 3mA maximum collector current. Operates within a -40°C to 100°C temperature range, with a 100mW maximum power dissipation. Packaged in a through-hole mount, top-view oriented case with a 25° viewing angle. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.84mm |
| Length | 4.19mm |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 100 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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