OP506A
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Краткое описание:
NPN Phototransistor 30V 935nm Through Hole
Дополнительная информация
NPN phototransistor chip for optical sensing applications. Features a 935nm wavelength, 30V collector-emitter breakdown voltage, and a maximum collector current of 5.95mA. Encased in a T-1 package with through-hole mounting and a 60° viewing angle. Operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 100mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Lead Length | 12.7mm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 60° |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Max Collector Current | 5.95mA |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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