OP506D
Снят с производства
Краткое описание:
NPN Phototransistor, 30V, 3mA, Through Hole, -40°C to 100°C
Дополнительная информация
The OP506D is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 3mA. It is designed for through-hole mounting and operates over a temperature range of -40°C to 100°C. The device has a power dissipation of 100mW and is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | T |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| Package Quantity | 100 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Max Collector Current | 3mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |