OP508FA

OP508FA - TT
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Краткое описание: 30V 5.1mA Radial Through Hole NPN Phototransistor
Производитель TT

Дополнительная информация

The OP508FA is a 30V NPN phototransistor from TT, packaged in a radial through hole configuration. It can handle up to 5.1mA of collector current and has a maximum power dissipation of 100mW. The device operates within a temperature range of -40°C to 100°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Polarity NPN
Packaging Bulk
Wavelength 890nm
Orientation Top View
Package/Case Radial
Viewing Angle 120°
RoHS Compliant Yes
Package Quantity 100
Power Dissipation 100mW
Number of Elements 1
Radiation Hardening No
Max Breakdown Voltage 30V
Max Collector Current 5.1mA
Max Power Dissipation 100mW
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V

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