OP508FB
Краткое описание:
Phototransistor NPN 30V 5.1mA 100mW Radial Through Hole
Дополнительная информация
The OP508FB phototransistor is a radial package phototransistor with a collector emitter breakdown voltage of 30V and a maximum collector current of 5.1mA. It has a maximum power dissipation of 100mW and operates between -40°C and 100°C. The device is mounted through a hole and has a viewing angle of 120°. It is not RoHS compliant.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 890nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 120° |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Max Collector Current | 5.1mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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